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<article article-type="research-article" dtd-version="1.3" xml:lang="ru">
  <front>
    <journal-meta>
      <journal-title-group>
        <journal-title>St. Petersburg Polytechnic University Journal: Physics and Mathematics</journal-title>
        <trans-title-group xml:lang="ru">
          <trans-title>Научно-технические ведомости СПбГПУ. Физико-математические науки</trans-title>
        </trans-title-group>
      </journal-title-group>
      <issn pub-type="epub">2304-9782, 2618-8686, 2405-7223</issn>
    </journal-meta>
    <article-meta>
      <article-id pub-id-type="publisher-id">6</article-id>
      <title-group>
        <article-title>The resistive switching effect in polymer materials and nonvolatile memory based on this effect</article-title>
        <trans-title-group xml:lang="ru">
          <trans-title>Эффект резистивного переключения в полимерных материалах и энергонезависимая память на его основе</trans-title>
        </trans-title-group>
      </title-group>
      <contrib-group>
        <contrib contrib-type="author">
          <name>
            <surname>Kotova</surname>
            <given-names>Maria</given-names>
          </name>
          <email>marykot58@gmail.com</email>
        </contrib>
        <contrib contrib-type="author">
          <name>
            <surname>Dronov</surname>
            <given-names>Mikhail</given-names>
          </name>
          <email>mikhail.dronov@gmail.com</email>
        </contrib>
        <contrib contrib-type="author">
          <name>
            <surname>Belogorokhov</surname>
            <given-names>Ivan</given-names>
          </name>
        </contrib>
      </contrib-group>
      <pub-date publication-format="electronic" date-type="pub" iso-8601-date="2012-06-10">
        <day>10</day>
        <month>06</month>
        <year>2012</year>
      </pub-date>
      <issue>2</issue>
      <issue-id pub-id-type="publisher-id">146</issue-id>
      <fpage>37</fpage>
      <lpage>40</lpage>
      <abstract xml:lang="en">
        <p>Resistive switch effect in polystyrene has been investigated at room temperature and at the liquid helium temperature. Applied fields did not exceed 400 kV/cm, values of current density were less than 8 mA/mm2. Stable, fast (down to 10 ns),multiple (up to 106 times) reiterative switches were fulfilled for creation nonvolatile resistive memory.</p>
      </abstract>
      <kwd-group xml:lang="en">
        <kwd>resistive memory</kwd>
        <kwd>nonvolatile memory</kwd>
        <kwd>electrical switches</kwd>
        <kwd>polymer materials</kwd>
        <kwd>model ofconducting filaments</kwd>
      </kwd-group>
    </article-meta>
  </front>
</article>
