St. Petersburg Polytechnic University Journal: Physics and Mathematics Научно-технические ведомости СПбГПУ. Физико-математические науки 2304-9782, 2618-8686, 2405-7223 5 Reactor pressure effect on optical properties of MOVPE-grown InGaN heterostructures Влияние давления в реакторе на оптические свойства структур InGaN, выращенных методом ГФЭ МОС Chernysheva Ekaterina EkChernisheva@gmail.com Sakharov Alexey val@beam.ioffe.rssi.ru Cherkashin Nikolai nikolag@cemes.fr Lundin V.V. lundin@vpegroup.ioffe.ru Tsatsulnikov Andrey andrew@beam.ioffe.ru 10 06 2012 2 146 32 36

Influence of reactor pressure during MOVPE growth on optical properties of InGaN heterostructures has been studied. It was found that reactor pressure influences not only indium incorporation, but also strongly modifies optical properties of structures.

 III-nitrides light-emitting diodes optical properties pressure epitaxy