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<!DOCTYPE article PUBLIC "-//NLM//DTD JATS (Z39.96) Journal Publishing DTD v1.3 20210610//EN" "https://jats.nlm.nih.gov/publishing/1.3/JATS-journalpublishing1-3.dtd">
<article article-type="research-article" dtd-version="1.3" xml:lang="ru">
  <front>
    <journal-meta>
      <journal-title-group>
        <journal-title>St. Petersburg Polytechnic University Journal: Physics and Mathematics</journal-title>
        <trans-title-group xml:lang="ru">
          <trans-title>Научно-технические ведомости СПбГПУ. Физико-математические науки</trans-title>
        </trans-title-group>
      </journal-title-group>
      <issn pub-type="epub">2304-9782, 2618-8686, 2405-7223</issn>
    </journal-meta>
    <article-meta>
      <article-id pub-id-type="publisher-id">11</article-id>
      <title-group>
        <article-title>A formation method of amorphous and crystalline silicon nanoclusters in dielectric films</article-title>
        <trans-title-group xml:lang="ru">
          <trans-title>Способ формирования аморфных и кристаллических нанокластеров кремния в диэлектрических пленках</trans-title>
        </trans-title-group>
      </title-group>
      <contrib-group>
        <contrib contrib-type="author">
          <name>
            <surname>Korchagina</surname>
            <given-names>Taisia</given-names>
          </name>
          <email>Taisiya999@mail.ru</email>
        </contrib>
        <contrib contrib-type="author">
          <name>
            <surname>Volodin</surname>
            <given-names>Vladimir</given-names>
          </name>
          <email>volodin@isp.nsc.ru</email>
        </contrib>
      </contrib-group>
      <pub-date publication-format="electronic" date-type="pub" iso-8601-date="2010-03-10">
        <day>10</day>
        <month>03</month>
        <year>2010</year>
      </pub-date>
      <issue>1</issue>
      <issue-id pub-id-type="publisher-id">94</issue-id>
      <fpage>66</fpage>
      <lpage>71</lpage>
      <abstract xml:lang="en">
        <p>The method of formation of silicon nanocrystals and amorphous nanoclusters of silicon in the films of nonstoichiometric nitride and silicon oxide on glass and silicon substrates is considered. The method is based on using of nano- and femto- second pulse laser annealings.</p>
      </abstract>
      <kwd-group xml:lang="en">
        <kwd>silicon nanoclusters</kwd>
        <kwd>silicon nitride and silicon oxide films</kwd>
        <kwd>pulse laser annealing</kwd>
      </kwd-group>
    </article-meta>
  </front>
</article>
