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<article article-type="research-article" dtd-version="1.3" xml:lang="ru">
  <front>
    <journal-meta>
      <journal-title-group>
        <journal-title>St. Petersburg Polytechnic University Journal: Physics and Mathematics</journal-title>
        <trans-title-group xml:lang="ru">
          <trans-title>Научно-технические ведомости СПбГПУ. Физико-математические науки</trans-title>
        </trans-title-group>
      </journal-title-group>
      <issn pub-type="epub">2304-9782, 2618-8686, 2405-7223</issn>
    </journal-meta>
    <article-meta>
      <article-id pub-id-type="publisher-id">9</article-id>
      <title-group>
        <article-title>Diffusion-reaction model of the interaction of sili- cide-forming metal with the silicon carbide</article-title>
        <trans-title-group xml:lang="ru">
          <trans-title>Диффузионно‐реакционная модель взаимодействия силицидообразующего металла с карбидом кремния</trans-title>
        </trans-title-group>
      </title-group>
      <contrib-group>
        <contrib contrib-type="author">
          <name>
            <surname>Aleksandrov</surname>
            <given-names>Oleg</given-names>
          </name>
          <xref ref-type="aff" rid="aff1"/>
        </contrib>
        <contrib contrib-type="author">
          <name>
            <surname>Kozlovski</surname>
            <given-names>Vitaly</given-names>
          </name>
          <xref ref-type="aff" rid="aff2"/>
          <email>vkozlovski@phmf.spbstu.ru </email>
        </contrib>
      </contrib-group>
      <aff id="aff1">Saint Petersburg Electrotechnical University LETI</aff>
      <aff id="aff2">Peter the Great St. Petersburg Polytechnic University</aff>
      <pub-date publication-format="electronic" date-type="pub" iso-8601-date="2009-03-30">
        <day>30</day>
        <month>03</month>
        <year>2009</year>
      </pub-date>
      <issue>1</issue>
      <issue-id pub-id-type="publisher-id">73</issue-id>
      <fpage>64</fpage>
      <lpage>71</lpage>
      <abstract xml:lang="en">
        <p>A quantitative model of the interfacial interaction of a silicide-forming metal - nickel with single-crystal silicon carbide has been developed on the basis of interdiffusion of components with account of the Kirkendall effect and the volume reactions of the formation of silicides. The model describes satisfactorily the basic features of component redistribution in the system Ni-SiC under bombardment by protons at elevated temperatures.</p>
      </abstract>
      <kwd-group xml:lang="en">
        <kwd>silicide-forming metal</kwd>
        <kwd>silicon carbide</kwd>
        <kwd>ohmic contacts</kwd>
        <kwd>diffusion equations</kwd>
      </kwd-group>
    </article-meta>
  </front>
</article>
