The analysis of the electronic processes in hydrogenated vanadium dioxide films at metal-semiconductor phase transition is performed. Modeling experiments on selective hydrogenation film crystallites of (the) various sizes are executed. It is established, that the hydrogenation of vanadium dioxide lowers the phase transition temperature in crystallites of film and is shown, that in a metal phase migration of a proton occurs practically freely, whereas in a semi-conductor phase migration is stopped by localization of proton in potential minimum of crystal cell.